值微冲击开关的研制

值微冲击开关的研制

陈光焱, 杨黎明

文章导航 > 爆炸与冲击 > 2007 > 27(2): 190-192

陈光焱, 杨黎明. 值微冲击开关的研制[J]. 爆炸与冲击, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

引用本文:

陈光焱, 杨黎明. 值微冲击开关的研制[J]. 爆炸与冲击, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

Citation:

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

陈光焱, 杨黎明. 值微冲击开关的研制[J]. 爆炸与冲击, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

引用本文:

陈光焱, 杨黎明. 值微冲击开关的研制[J]. 爆炸与冲击, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

Citation:

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

值微冲击开关的研制

doi: 10.11883/1001-1455(2007)02-0190-03

1.
中国工程物理研究院电子工程研究所，四川绵阳 621900

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出版历程
- 刊出日期: 2007-03-25

Fabrication of a high-g micro impact switch

1.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, Sichuan, China

摘要: 采用微机电系统（MEMS）技术设计制作了一种微冲击开关，其敏感元件由悬臂梁支撑的质量块和其下的微触点构成。在冲击加速度作用下，质量块与触点碰撞实现接通。开关芯片体积为5 mm5 mm0.5 mm，动作门限3 000g，响应时间84 s，能承受极端的高冲击而不破坏。
- 固体力学 /
- 冲击响应 /
- 微机电系统 /
- 冲击开关 /
- 高g值
Abstract: The impact switch is a kind of inertial device that can sense impact acceleration and output on-off signal. A micro-mechanical impact switch is designed and fabricated with MEMS technology. The sensitive unit of the micro impact switch consists of a seismic mass supported with a cantilever beam. The movable mass is displaced to contact the micro electrode tip when subjected to impact acceleration. The chip size of the switch is 5 mm5 mm0.5 mm and the switch threshold is 3 000g while the response time is 84 s. It can survive ultra-high g-loads impact.
- solid mechanics /
- impact response /
- MEMS /
- impact switch /
- high-g level

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文章访问数: 2935
HTML全文浏览量: 185
PDF下载量: 286
被引次数: 0

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