Parameters variation of solid tantalum capacitors used in fuze under high-g shock
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摘要: 通过实验研究分析了高冲击载荷对固态钽电容器电容量、漏电流等电参数的影响。结果显示，钽电容电参数随着冲击载荷的升高，电容量增大，同时漏电流呈指数型升高。冲击过后，钽电容电参数可恢复至原来的量级。冲击载荷引起钽电容电参数变化的机理为：冲击引起的钽电容的弹性变形使电容量增大，冲击引起的介质层Ta2O5中的微裂缝以及冲击引发的介质层中陷阱浓度的增大使漏电流升高。Abstract: A series of experiments were carried out to explore the effects of high-g shock load on the electrical parameters (capacitance and leakage current) of the solid tantalum capacitor. The results show that the capacitance increases with the increase of the shock load and the leakage current increases exponentially with the rising shock load. After the shock load, the electrical parameters return to their initial values as demonstrated. The variations of the tantalum capacitors' electrical parameters were explained by a combination of three mechanisms: the shock-induced elastic deformation of the tantalum capacitor that leads to the capacitance's increase, the shock-induced micro-defects and shock-induced rise of the electron traps concentration that leads to the leakage currents' increase.
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Key words:
- high-g shock load /
- solid tantalum capacitor /
- capacitance /
- leakage current
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图 4 不同电容漏电流与冲击载荷关系
Figure 4. Relationship between leakage currents and shock loads of different capacitors
表 1 钽电容参数及测量范围
Table 1. Tantalum capacitors and sensor
电容 型号 数量 电容量 漏电流 测量范围/μF 测量精度/μF 误差/% 测量范围/mA 测量精度/mA 误差/% 16 V22 μF
16 V47 μF
25 V22 μF
25 V47 μF16K226
16K476
25K226
25K4765
5
5
50~47 ±0.01 99.98~100.02 0~2 ±0.01 99.5~100.5 
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表 2 漏电流-冲击模型
Table 2. Numerical model of leakage current-shock load
电容 漏电流-冲击模型 最大漏电流/mA 临界冲击载荷/(104g) 16 V22 μF I=A1+A2exp(α g) A1=1.09×10-4，A2=8.17×10-6，α=3 429 1.1 1.65 16 V47 μF I=B1+B2exp(β g) B1=2.14×10-4，B2=5.28×10-5，β=4 506 2.4 1.72 25 V22 μF I=C1+C2exp(γ g) C1=1.17×10-4，C2=8.98×10-5，γ=4 427 3.5 1.74 25 V47 μF I=D1+D2exp(λ g)D1=2.14×10-4，D2=5.28×10-5，λ=4 506 7.3 1.85
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表 3 冲击载荷下钽电容容量的改变量
Table 3. Capacitance variation for different capacitors
电容 体积/mm3 数量/105 电容变化/μF 1 000 g 3 000 g 10 000 g 16 V22 μF 2.5×2.0×1.5 1.07 0.06 0.12 0.24 16 V47 μF 4.0×3.0×0.8 1.37 0.08 0.16 0.36 25 V22 μF 3.5×2.8×1.5 2.10 0.12 0.24 0.46 25 V47 μF 4.0×3.0×1.7 2.92 0.18 0.32 0.76
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[1] 徐建军.高冲击高温下电引信关键元器件可靠性测试[J].弹箭与制导学报, 2011, 31(1):151-152. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=djyzdxb201101044XU Jianjun. Reliability test of key components of electric fuze subjected to high impact and high temperature[J]. Journal of Projectiles, Rockets, Missiles and Guidance, 2011, 31(1):151-152. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=djyzdxb201101044 [2] TEVEROVSKY A. Effect of mechanical stresses on characteristics of chip tantalum capacitors[J]. IEEE Transactions on Device and Materials Reliability, 2007, 7(3):399-406. doi: 10.1109/TDMR.2007.907289 [3] TEVEROVSKY A. Effect of reverse bias stress on leakage currents and breakdown voltages of solid tantalum capacitors[R]. Greenbelt, MD: NASA Goddard Space Flight Center, 2011. [4] 程融, 张永录.某型电子干扰弹引信用固体钽电容器失效分析[J].国防技术基础, 2009(8):28-30. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=gfjc200908012&dbname=CJFD&dbcode=CJFQCHENG Rong, ZHANG Yonglu. Failure analysis of solid tantalum capacitors used for electronic jamming bombs fuse[J]. Technology Foundation of National Defence, 2009(8):28-30. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=gfjc200908012&dbname=CJFD&dbcode=CJFQ [5] 何荣华, 张亚, 李波, 等.高过载下军用电容的参数变化研究及失效分析[J].电子产品可靠性与环境试验, 2010, 28(1):24-26. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=dzkh201001012&dbname=CJFD&dbcode=CJFQHE Ronghua, ZHANG Ya, LI Bo, et al. Parametric variation and failure analysis of military capacitors under high overload[J]. Electronic Product Reliability & Environmental Testing, 2010, 28(1):24-26. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=dzkh201001012&dbname=CJFD&dbcode=CJFQ [6] 景义林.旋转椭球形电容器的电容与静电能[J].大学物理, 2011, 30(10):25-27. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=dxwl201110010&dbname=CJFD&dbcode=CJFQJING Yilin. The capacitance and electrostatic energy of a revolving ellipsoidal capacitor[J]. College Physics, 2011, 30(10):25-27. http://kns.cnki.net/KCMS/detail/detail.aspx?filename=dxwl201110010&dbname=CJFD&dbcode=CJFQ [7] CHIU F C. A review on conduction mechanisms in dielectric films[J]. Advances in Materials Science & Engineering, 2014, 2014(7):1-18. http://www.mendeley.com/catalog/review-conduction-mechanisms-dielectric-films/ -
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