Mechanical behavior of additively manufactured AlSi10Mg alloy with annealing state under extreme conditions
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摘要: 采用激光选区熔化技术制备AlSi10Mg合金并对其进行了去应力退火处理，通过光学显微镜、扫描电子显微镜和电子背散射衍射技术研究了合金的微观组织。为了解AlSi10Mg合金在宽应变率和宽温度下的耦合作用对力学行为的影响，通过配有环境温箱的万能试验机和分离式霍普金森压杆分析了其在极端条件下的力学行为。结果表明：AlSi10Mg合金具有精细的胞状-枝晶微观结构，主要包含α-Al相和Si相，经退火热处理后，微观组织由断续的、呈链状分布的共晶Si颗粒构成。AlSi10Mg合金在室温应变率为0.002～4 800 s−1时，呈现出应变率强化效应，且在不同的应变率范围内具有不同的敏感性；在173 K下具有更高的屈服强度和流动应力。当温度为173～243 K时，流动应力对温度不敏感；而温度为293～573 K时，温度敏感性显著提高，合金软化效应随着温度的升高而加剧。基于实验结果拟合了修正的J-C本构模型并进行了验证，该模型可较好地反映材料在高低温和不同应变率下的力学行为。
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关键词:
- 激光选区熔化 /
- AlSi10Mg合金 /
- 微观组织 /
- 力学行为 /
- 修正J-C本构模型
Abstract: In this study, AlSi10Mg alloy was prepared by selective laser melting (SLM) first, and then subjected to stress relieved annealing treatment. The microstructures of the alloy were analyzed by optical microscope (OM), scanning electron microscope (SEM) and electron backscatter diffraction (EBSD) technology. To understand the influence of coupling effects on the mechanical behavior of AlSi10Mg alloy under wide strain rates and wide temperatures, the mechanical behavior of the alloy under extreme conditions (high and low temperatures, high strain-rate) were analyzed by universal testing machine with an environmental chamber and split Hopkinson pressure bar. The results show that AlSi10Mg alloy possesses fine cellular dendritic microstructure, mainly including α-Al and Si phases, and annealing treatment can result in the discontinuous distribution of eutectic Si particles. The average grain size is 3.7 μm. AlSi10Mg alloy displays strain-rate strengthening effect under room temperature condition at 0.002–4 800 s−1, and has different strain-rate sensitivity in different strain-rate ranges. Under high strain-rate conditions, strain hardening effect still dominates. The material has higher yield strength and flow stress at 173 K. When the strain-rate is 0.002 s−1, the SLM AlSi10Mg alloy has different temperature sensitivities in different temperature ranges. The alloy does not have temperature sensitivity in the range of 173–243 K; the material exhibits temperature sensitivity ranging from 293 K to 573 K, and the softening effect due to temperature on the material intensifies with increasing temperature. Based on the J-C constitutive model, a modified J-C constitutive model expressed by piecewise functions is constructed and the experimental results are fitted. In addition, experimental verification was conducted on the modified J-C constitutive model, and the predicted results are basically consistent with the experimental results. Within the scope of the study, the modified J-C constitutive model effectively reflects the mechanical behavior of the alloy at high and low temperatures and under different strain-rate. -
图 3 退火态SLM AlSi10Mg合金xOy面和xOz面微观组织图像
Figure 3. Microstructure of xOy plane and xOz plane of SLM AlSi10Mg alloy after annealing treatment
图 5 室温及173 K、不同应变率下的真实应力-应变曲线
Figure 5. True stress-strain curves under different strain rates at room temperature and 173 K
图 6 室温下ɛ=0.1时不同应变率与流动应力的关系
Figure 6. Relationship between different strain and flow stress at room temperature when ɛ=0.1
图 7 0.002 s−1下不同温度的真实应力-应变曲线和温度与流动应力的关系
Figure 7. True stress-strain curves at different temperatures under 0.002 s−1 and relationship between temperature and flow stress
图 9 J-C本构模型计算数据与实验数据
Figure 9. Comparison between experimental data and calculated data from J-C constitutive model
图 11 J-C本构模型计算数据与实验数据
Figure 11. Comparison between experimental data and calculated data from J-C constitutive model
图 12 本构模型预测值与实验值的相关性
Figure 12. Correlation between experimental values and predicted values from constitutive model
图 13 室温及高温下本构模型的验证
Figure 13. Verification of constitutive models at room temperature and high temperature
表 1 AlSi10Mg粉末的化学组成
Table 1. Chemical composition of AlSi10Mg powder %
Al Si Mg Fe Mn Cu Ti 88.93 10.32 0.29 0.16 0.10 0.05 0.15 
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表 2 AlSi10Mg打印工艺参数
Table 2. Processing parameters of AlSi10Mg
激光功率/
W扫描速度/
(m·s−1)扫描间距/
mm层厚/
mm旋转角度/
(°)预热温度/
K300 1.2 0.2 0.03 30 423
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表 3 修正后的J-C本构模型参数
Table 3. Modified J-C constitutive model parameters
A/MPa B/MPa n C1 C2 k 223 120 0.33 0.014 1.83×10−5 2.71
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表 4 修正后的J-C本构模型温度参数
Table 4. Revised J-C constitutive model of temperature parameters
T/K m 373 1.026 473 0.879 573 0.590
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表 5 低温J-C本构模型参数
Table 5. J-C constitutive model parameters at low temperature
A/MPa B/MPa n C m 234 145 0.3 0.014 2.91
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