Fabrication of a high-g micro impact switch

CHEN Guang-yan; YANG Li-ming

doi:10.11883/1001-1455(2007)02-0190-03

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CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

Citation:

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

Citation:

CHEN Guang-yan, YANG Li-ming. Fabrication of a high-g micro impact switch[J]. Explosion And Shock Waves, 2007, 27(2): 190-192. doi: 10.11883/1001-1455(2007)02-0190-03

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Fabrication of a high-g micro impact switch

doi: 10.11883/1001-1455(2007)02-0190-03

1.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, Sichuan, China

Publish Date: 2007-03-25

Abstract

Abstract

The impact switch is a kind of inertial device that can sense impact acceleration and output on-off signal. A micro-mechanical impact switch is designed and fabricated with MEMS technology. The sensitive unit of the micro impact switch consists of a seismic mass supported with a cantilever beam. The movable mass is displaced to contact the micro electrode tip when subjected to impact acceleration. The chip size of the switch is 5 mm5 mm0.5 mm and the switch threshold is 3 000g while the response time is 84 s. It can survive ultra-high g-loads impact.
- solid mechanics,
- impact response,
- MEMS,
- impact switch,
- high-g level